| 摘要 |
<p>PURPOSE:To obtain the semiconductor laser, which is controlled at a fundamental lateral mode, can be continuously operated by a low threshold current at a room temperature, and has a long life, by perfoming guiding based on difference in refractive index due to doping and the difference in effective rafractive index due to the difference in thickness, in the active layer in the semiconductor laser. CONSTITUTION:A p<+> region 15 is formed in a part of an epitaxial wafer as shown by slant lines. The p<+> region 15 is selectively formed in at least a layer 14- a layer 12 by the diffusion and the like of Zn or the like, so that a p-n junction is generated at the position separated by a specified distance from the position of a step where the difference in thickness of an n-Gal-yAlyAs layer 12 appears, in the direction of the thicker part. After the formation of the p<+> region 15, the part of the n-GaAs layer 14, which is a cap layer, over the step of the layer 12 and the p-n junction are selectively removed, and the n-GaAs layer 14 is divided into two parts, i.e. the n region and the p<+> region. Then an electrode 16 comprising gold and tin (AuSn) is formed on the n region of the n-GaAs layer 14, and an electrode 17 comprising gold and zinc (AuZn) is formed on the p<+> region.</p> |
