| 摘要 |
<p>PURPOSE:To obtain a gold wire for semiconductor device bonding improved in strength after bonding, that is, breaking load and elongation percentage, by incorporating prescribed proportion of Ge to high-purity gold of a specific purity of above. CONSTITUTION:The titled gold wire for bonding is composed by incorporating 0.02-0.65wt% Ge to high-purity gold (Au) of >=99.99wt%. At this time, as to Ge content, its effect can not be produced in case of <0.02wt% and bonding incapability is brought about in case of >0.05wt%. Owing to the above- mentioned characteristics, the gold wire of this invention is capable of preventing the coarsening of grains right above a neck caused by the heat generated at the time of gold-ball formation. Accordingly, neck breakage right above the gold balls of bonding gold wire in a resin-molded semiconductor device can be prevented.</p> |
