| 摘要 |
PURPOSE:To obtain the substrate for mounting of the semiconductor element having superior heat radiation by a method wherein a film consisting of an organic matter having the electrically insulating property and moreover having comparatively favorable thermal conductivity is coated as a thin layer on the surface of a tape of metal, alloy or composite thereof having favorable thermal conductivity. CONSTITUTION:The metal substrate 1 for mounting of the Si semiconductor element 6 and coated with the SiC thin film 4 is manufactured according to the plasma CVD method, and copper of 1.0mm. thickness and containing Zr is used for the metal substrate 1. The plasma CVD method is performed using a capacitive coupling type glow discharge device and mixed gas of 1X10<-2> Torr of SiH4 and CH4, and by heating the substrate at 500 deg.C. Accordingly the substrate 3 for mounting of the semiconductor coated with the SiC thin film 4 of 3mum thickness having favorable adhesion, having the dielectric strength characteristic of 3MV/ cm or more, having the coefficient of thermal expansion approximated to the Si element to be mounted and having superior heat radiation is obtained. |
