| 摘要 |
PURPOSE:To permit to control the thickness of a nondefective layer with good accuracy and to consequently obtain a semiconductor device being affected a little influence of gamma-rays with good efficiency by a method wherein the amount of oxygen iron implantation for forming defective nuclei and the depth are controlled. CONSTITUTION:The depth of oxygen ion 2 implantation is controlled by implanting oxygen ions into the surface of an Si substrate 1. Next, heat treatment is applied to said Si substrate 1 under nitrogen atmosphere at about 750 deg.C for about 6hr and the oxygen ion 2 is deposited to form defective nuclei 3 in the inside of the Si substrate 1. Then, heating treatment is further applied under nitrogen atmosphere at about 1,200 deg.C for about 30min to generate internal defects 4 with the defective nuclei 3 as the central figure. In this way, a nondefective layer 5 is formed on the surface of the Si substrate 1 by generating the internal defects 4. |
