| 摘要 |
PURPOSE:To simplify an insulating and supporting structure and to decrease output drift, by coating the surface of piezoresistors except electrode parts with a conductive layer through an insulating layer, and joining a support electrostatically to the rear surface of a sapphire substrate through a semiconductor epitaxial layer. CONSTITUTION:An epitaxial layer 2 consisting of n type silicon is formed on the front surface of a sapphire substrate 1, and piezoresistors 3 consisting of p type silicon are formed thereon. An insulating layer 5 consisting of SiO2 and a conductor layer 6 consisting of polysilicon are provided thereon except the parts of the electrodes 4 thereof. An epitaxial layer 7 consisting of n type silicon is formed on the rear surface of the substrate 1 and a support 8 consisting of glass is joined electrostatically thereto. The output drift occuring in the migration, etc. of ions in the layer 5 is prevented by provision of the layer 6 on the surface. Since an electrostatic joining method is used, insulating and supporting structure is simplified. |
