| 摘要 |
PURPOSE:To allow the formation of an element isolation structure in a simple process, by constituting the isolation structure of an oxide film and a p type Si region left at the bottom of a V-groove. CONSTITUTION:Over the entire surface of a p type Si semiconductor substrate 1, an n type impurity is injected at high density resulting in the formation of an n<+>b region 2. Using dichlorosilane as reaction gas, a p type epitaxial layer 4 is grown over the entire surface on the substrate. This epitaxial growth using dichlorosilane has a large growing speed on a V-groove, and accordingly the surface of the epitaxial layer 4 turns into a gentle surface even on the V-groove. Over the entire surface, an Si3N4 film 5, as an oxidation resisting film, is formed and removed on the V-groove, and then the epitaxial layer 4 on the V-groove is oxidized in oxidizing atmosphere. Even when the epitaxial layer 4 is oxidized from the surface down to the n<+>b region 2, a p type Si region 4' is left at the bottom. After removing the Si3N4 film 5, various kind of elements are formed on the region surrounded by an oxide film 6. |
