| 摘要 |
PURPOSE:To form a buried ion implanted region, whose depth is 0.5-1.5mum, even after the melt back, with regard to the manufacture of a light receiving element, by performing the channel ion implantation from the direction of <110>, when the ions are implanted into an InP window layer. CONSTITUTION:A light absorbing layer 3 comprising InGaAsP and then a first InP window layer 4 are sequentially grown on a substrate 1 in the surface bearing (100) by liquid phase epitaxial method. The channeling ions are selectively implanted in the window layer 4 in the direction <110>, and an ion dimplanted region 5 is formed. Thereafter, a second InP window layer 6 is grown on the window layer 4 by the liquid phase epitaxial method. A light receiving part 7 and a guard ring region 8 are formed in the window 6. Finally, after an Si3N4 film 9 has been formed on the window layer 6, a window for a P side electrode is provided. By using AuZn and AuGe, a P side electrode 10 and an N side electrode 11 are formed. |
