发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate the undercut at the time of electrode etching and the position shift of a photomask and to form metal layers with good accuracy by a method wherein openings are provided at the first minute pattern and the second pattern larger than the first minute pattern, and after removing the first photosensitive resin, a metal layer is formed on the second photosensitive resin and the metal layers on the first and the second photosensitive resin are removed. CONSTITUTION:A substrate is reacted in electrolyte and the substrate corresponding to an opening section is etched. Next, an negative-type photoresist 5 is additionally formed on a photoresist having said opening section 4, and opening is provided for a pattern 4' wider than the opening section 4 by using a photomask. Then the negative type photoresist and the positive type resist at the opening section are removed by oxygen plasma. After that, a metal layer 6 is formed by a vacuum evaporation method or the like. After that, when the remained positive type photoresist is removed, a metal layer on the positive type photoresist is simultaneously removed to form a desired electrode pattern 6'.
申请公布号 JPS58102520(A) 申请公布日期 1983.06.18
申请号 JP19810201261 申请日期 1981.12.14
申请人 NIPPON DENKI KK 发明人 MUKOUHARA HIROAKI
分类号 H01L21/28;(IPC1-7):01L21/28 主分类号 H01L21/28
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