| 摘要 |
PURPOSE:To form into one having a right operation speed, by changing the output potential of a potential generation mean in non-volatile manner. CONSTITUTION:When a negative write voltage VW larger than VDD is provided to an input terminal 13, a large negative potential is impressed on the source and drain of an MNOS transistor 11, and accordingly the output potential B becomes VDD, and the gate of the MNOS transistor 11 becomes VDD. As a result, the pair of electrons and holes is generated, electrons are trapped at the interface between an Si oxide film 103 and an Si nitride film 104, and the threshold voltage of the MNOS transistor 11 becomes a positive value. When the voltage VW is stopped, the potential A becomes VDD, and the potential B becomes VSS. Since thereat the threshold voltage is transferred into a positive value, when the potential B becomes VSS, the MNOS transistor 11 and the MOS transistor 2 are ON, and accordingly the potential C becomes VDD, and the output potential V0 becomes VSS. Even when the potential VDD is once broken and impressed again, the threshold voltage does not vary, and accordingly the output potential V0 before breaking VDD is held resulting in non-volatile change. |
