| 摘要 |
PURPOSE:To reduce damages of active element parts, by forming a gate insulation film, a hydrogenated amorphous silicon film (a-SiH film), and a passivation film in continuity, without breaking a vacuum. CONSTITUTION:On a glass substrate 1 whereon the gate electrode 2, the gate insulation film (SiO2)3 and the a-SiH film 4 are formed, and an insulation film (SiO2 film)5 is formed by a glow discharge method with the same device. In other words, with a thin film three-layer consisting of SiO2 film/a-Si film/SiO2 film as the raw material, using SiH4, N2O, O2, H2, they are continuously formed by changing the raw material gas. Thereafter, the third layer SiO2 film 5 is left on a channel part, the SiO2 film 5 on the region wherein a source 6 and a drain 7 are formed is etched and opened, and a semiconductor and a metal which have ohmic property are formed at the part. Thereby, a passivation film 5 is formed at a channel part. |
