| 摘要 |
PURPOSE:To perform only one heat treating process and to generate breakdown only at a light receiving part with regard to the manufacture of a light receiving element, by implanting Be ions in a light receiving region in a substrate layer, etching the part other than the light receiving part of said region, without forming a guard ring region. CONSTITUTION:On an InP substrate 11, a light absorbing layer 13 comprising InGaAs or InGaAsP, then first N type InP window layer 14, and a second N<-> type InP window layer 15, whose impurity concentration is lower than the layer 14, are formed. Be 17 is implanted in a region 21 in the layer 15 which is to receive the light, and a phosphorus silicate glass film 18 is coated as a heat treating protecting film on the layer 15. The heat treatment is performed for 20min at 750 deg.C. The Be implanted layer 21 having P-N<-> junction part 19 and a P-N junction part 20 are formed. Thereafter the film 18 is removed. Then, the layer 21 other than the region which is to become the light receiving part and its vicinity is etched so that a depth X from the surface becomes about 1mum. Since the voltage resistance of the junction 20 is smaller than that of the junction 19, the breakdown can be generated only by the light receiving part. |
