| 摘要 |
PURPOSE:To allow a gate electrode to perform self-alignment resulting in the reduction of the seat resistance component of series resistance, by using SiO2 as the etching mask for a gate metal. CONSTITUTION:The SiO2 film 32 is adhered on a GaAs semi-insulating substrate 31, and the SiO2 film, corresponded to an active layer 33 forming region, is removed. Thereafter, with the SiO2 film 32 as a mask, Si<+> 34 is ion-implaned and annealed resulting in the formation of the active layer 33. Next, after sputtering a Ti/W film 35, an SiO2 film 36 is adhered and etched into a gate electrode pattern. Thereat, a photo resist 37 serving as a mask is left, and, with the SiO2 film 36 as a mask, the Ti/W film 35 is etched. Then, after Si<+> 40 is ion- implanted, with the SiO2 film 32, photo resist 37 and SiO2 film 36 as masks, then source/drain regions 41 and 42 are formed by a high temperature annealing, and the photo resist is removed, the metal 43 for source/drain electrodes is adhered. On this metal, a photo resist 45 is applied, and, when it is scraped by an ion milling, source/drain electrodes 46 and 47 are formed. |
