| 摘要 |
PURPOSE:To allow the speed-up, by forming an external base region and an emitter region by self-alignment. CONSTITUTION:After being formed on a substrate, an Al metallic film is polished and then buried in the electrode window for emitter region connection, an Al metallic electrode 29 for emitter connection is formed, and, in the electrode window for collector region connection, the Al electrode for connection is buried and formed. Next, to the external base region 22, a doped poly Si electrode 28, wherein an SiO2 film is formed in the periphery, is connected. The electrode 29 for connection of the emitter region 28 is formed and buried in the poly Si electrode 28, and the surfaces of these electrodes 28 and 29 are formed in a flat state. Besides, the electrode 80 for collector region connection is formed in a flat state and buried. Since the emitter region 28 is self-aligned with the external base.poly Si electrode 22, the base region can be reduced, then base. collector capacities are decreased, accordingly the integration degree is improved. |
