| 摘要 |
PURPOSE:To eliminate the ununiformity of impurity concentration distribution and to form a semiconductor element active layer having effective safety by a method wherein an N or P-conductivity type impurity active layer is formed by implanting an impurity to a compound semiconductor substrate for heat treatment. CONSTITUTION:An N-conductivity type impurity ion<28> Si<+> is implanted into a Cr dope semiinsulating GaAs substrate 1 at implantation energy 100keV, does 3X10<12>(cm<-2>) to form an impurity injection layer 2. After that, SiO2 3 is grown with a film thickness of 1,000Angstrom by low temperature vapor growth, and temperature is risen from room temperature to 950 deg.C at a temperature rising speed of 100 deg.C/sec by using N2 atmosphere in an infrared anneal furnace and an Si dopant active layer 4 is formed by stopping infrared irradiation immediately after 2-3sec and by applying natural cooling. The formed N- conductivity type impurity active layer shows distribution closer to logically predicted L.S.S. distribution and the rate of electrical activity of the implanted impurity does not specially decrease but the improvement of the uniformity and reproducibility of profile distribution in a face is recognized. In this case, preferable time requiring to reach from room temperature to maximum temperature decided between about 750-1,000 deg.C is within 60sec. |
