发明名称 STORAGE CIRCUIT USING SCHOTTKY JUNCTION GATE TYPE FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To read FF without any external influence by varying the output of one FET connected to the other FET in accordance with the contents of the latter FET, and using the varied output as readout information when stored content of FF is read from two FETs. CONSTITUTION:FF consists of FETs Q1 and Q2, loads M1 and M2, and word power supply lines W1 and W2. To read stored iformation in the FFs, the word power supply lines W1 and W2, and a data write lines are held at a high potential and gates of FETs Q9 and Q10 are applied with the high potential to flow a specific current. Then, the FETs Q7 and Q8 turn on to flow the specific current to operate a source follower circuit which is loaded with the FETs Q9 and Q10 and a high and a low volages are developed at sources of the FETs Q7 and Q8 in accordance with the levels of the drain voltages of the FETs Q1 and Q2 and then detected by a sense amplifier SA to read the stored information. In this reading operation, currents of the FFs are not led out (external influence), and the reading is carried out stably.
申请公布号 JPS58102391(A) 申请公布日期 1983.06.17
申请号 JP19810199475 申请日期 1981.12.12
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 SUZUKI MASAO;SUDOU TSUNETAKA;NAGAFUNE KAZUO
分类号 G11C11/41;G11C11/412 主分类号 G11C11/41
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