| 摘要 |
PURPOSE:To store plural analog data successively by using an area where its threshold voltage varies according to an exponential function when VGS of characteristic during the electron emission of an MNOS memory is varied as an analog storage operating area. CONSTITUTION:In storing plural analog data successively, an area where the threshold voltage of an MIS type FET varies according to an exponential function varies when the potential difference VGS between the gate and source with regard to characteristics of an MNOS memory during electron emission is utilized as an analog memory. A switch group 6 at source terminal of this MIS type FET group 3 is opened and a terminal DATA is applied with a successive analog signal while a terminal GATE is held at a potential much less than the substrate; and the switch group 6 is closed successively and then opened to store said analog signal in the FET group 3 successively. Thus, analog information is inputted successively with time. |
