发明名称 SEMICONDUCTOR DIODE.
摘要 The semiconductor diode comprises three consecutive doped areas (11, 12, 13) in the following order p<++>p<+>n<++>. The three consecutive areas (11, 12, 13) are sufficiently doped so as to have a breaking voltage comprised between 17 and 24 volts.
申请公布号 AU8906282(A) 申请公布日期 1983.06.17
申请号 AU19820089062 申请日期 1982.09.03
申请人 ROBERT BOSCH GMBH 发明人 HEINKE, WOLFGANG;HEYKE, KLAUS;MICHEL, HARTMUT;SCHWENK, SIEGFRIED
分类号 H01L29/861;H01L29/866 主分类号 H01L29/861
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