| 摘要 |
PURPOSE:To obtain a solar battery which effectively utilizes not only light energy but heat energy, radiation resistance and high efficiency by forming an inorganic material layer on the surface of a semiconductor solar battery body. CONSTITUTION:A junction structure 12 is formed in a substrate 11 which is formed of GaAs, InP or Si or the like as a solar battery body 11', and an inorganic material layer 13 made of CaF2, LiF, CaSO4 or the like is superposed on the surface. Photovoltaic power I2 is produced indirectly by solar light exciting light 15 in the layer 13 in addition to the direct photovoltaic power I1 at the body 11' by the solar light 14. Further, thermally excited light 17 is produced in the layer 13 by the emission of the thermal energy 16 of the sun, and photovoltaic power I3 is produced indirectly at the battery body 11' by the light 17. Simultaneously, electron and hole pairs are produced at the layer 13 by the emission of the thermal energy 16, thereby becoming carrier 18, which is drifted to the body 11', thereby producing electromotive force I4. The layer 14 protects against radiation, and even if it is deteriorated, the lattice defect produced in the layer 13 becomes the center of emitting the light, and even of the I4, I5 are decreased, the I2, I3 are increased, thereby eliminating the variation in the electromotive force. |
