METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

A method for manufacturing a semiconductor integrated circuit includes diffusing an impurity of a second conductivity type into polycrystalline silicon layers formed on a first conductivity region in a substrate to form second conductivity regions, the polycrystalline silicon layers constituting first electrode wirings to the second conductivity regions; forming a thick oxidation film on the polycrystalline silicon layers and a thin oxidation film on the exposed surface of the substrate by a heat oxidation treatment; and removing the thin oxidation film to form a second electrode wiring to the first conductivity region, said second electrode wiring being insulated from the polycrystalline silicon layers by the thick oxidation film. The method provides integrated circuits such as I2L circuits which are capable of high speed operation and a high packaging density.