| 摘要 |
Temperature sensor in the form of a temperature-dependent semiconductor resistor, which operates in accordance with the principle of current propagation, having a semiconductor body 1, which is provided on its underside with an effectively conducting layer 13 and on its topside with a first 2 and a second 3 non-rectifying contact zone, which are connected to terminal leads 10, 11. In such temperature sensors it is possible to achieve in a simple fashion that all the finished sensors are within a prescribed (close tolerance) resistance range (e.g. 1000 OMEGA +/- 1%), so that there is no need to carry out selection. This is achieved when at least one further contact zone 4 to 8 with a surface area of different size is constructed on the topside of the semiconductor body 1, and at least one of the further contact zones is connected to the second contact zone 3. Such a temperature sensor can advantageously be produced in such a way that after the formation of the non-rectifying contact zones 2 to 8 the resistance is measured between at least the first contact zone 2 and the conductive layer 13, and then two contact zones are connected to one another, being selected such that the total resistance of the temperature sensor between the two contact zones 2, 3 provided with terminal leads 10, 11 is within a prescribed resistance range at a reference temperature. <IMAGE> |
