| 摘要 |
<p>PURPOSE:To stabilize the ageing variation of a contactor resistance by superposing Al which contains TiN and Cu on an ohmic contact layer or a Schottky junction layer, thereby preventing a void from forming due to electromigration. CONSTITUTION:A window is opened at an SiO2 film 2 on a diffused layer 8 of an Si substrate 1, Ti 3 is sputtered in Ar, TiN 4 is superposed by a reactive sputtering method in atmosphere having Ar and N or 5:1 of pressure dividing ratio, is annealed at 450 deg.C in N2, Ti4Si3 is formed in the boundary between Si and Ti as an ohmic contact. Then, Al 7 which contains Cu is covered by a sputtering method on the TiN4. The range of containing Cu is 0.5-16wt%. According to this structure, Cu is segregated in Al grain boundary, thereby suppressing electromigration along the grain boundary. Accordingly, the production of voids can be prevented, thereby reducing the ageing variation in the contacting resistance. Since the TiN is interposed and Si diffusion is prevented from the substrate, the void in the substrate can be prevented, thereby obtaining stable electrode in large current.</p> |
