| 摘要 |
PURPOSE:To reduce the number of assembling steps and to increase the efficiency of the characteristics of a field effect transistor by forming the electrodes of a gate and a drain in a beam lead structure, and forming the source electrode in the structure capable of being thermally press-bonding directly to a heat sink metal. CONSTITUTION:An electrode metal seat 16 is formed by plating on the source electrode of a GaAs substrate 14, gate and drain electroes 17, 18 are formed at the symmetrical positions to the seat, and beam lead electrodes 19, 20 are attached by thick plating. The base 16 is thermally press-bonded to a heat sink metal 21, thereby press-donding the leads 19, 20 to output metallized layers 24, 25 on the metal 21. The heat from the substrate 14 is conducted through the base 16 directly to the metal 21, the temperature distribution in the substrate is uniformly performed, the saturated output power is increased, thereby improving the linearity of the output and obtaining the highly efficient characteristics with high gain. Further, the line junction is made unnecessary, and the number of steps can be accordingly largely reduced. |
