| 摘要 |
PURPOSE:To make it possible to form a through hole, whose size is larger than the width of a lower interconnection layer, stably, by forming the through hole, whose size is larger than the width of the lower interconnection layer, in an interlayer insulating film to a depth so that at least the upper surface of a resin pattern is exposed. CONSTITUTION:In forming a through hole 15 for a multilayer interconnection on a semiconductor substrate 11, the depth of the hole is set and controlled so that at least the upper surface of a resin pattern on a lower interconnection layer 13 is exposed, when the through hole 15 is formed in an interlayer insulating film 14. Thus, the through hole 15, whose size is larger than the width of the lower interconnection layer 13, can be formed stably. Therefore, tolerance with respect to the position deviation of the through hole becomes large. The implementation of miniaturization and high density of the lower interconnection layer and easy pattern designing can be accomplished.
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