| 摘要 |
PURPOSE:To enable to reduce the projecting hours nearly in proportion to the exposuring area, and to enable to curtail sharply the total drawing hours at electron beam exposure by a method wherein a beam having the sectional area smaller than the area of an aperture in an upper aperture plate and moreover having a section having the beam current to form the blurred state of the edge part on the target to the allowable grade is imaged at the neighborhood of the upper aperture plate. CONSTITUTION:The beam of the section having the sectional area of 1/9 of the area of the aperture in the aperture plate and having the beam current density of 9 times as compared with as in the past is imaged at the neighborhood of the first aperture plate 2M. At thie time, the auxiliary aperture image is positioned at the corner part of the aperture 2H in the first aperture plate by a high speed deflector 13. Moreover at this time, a sectional size command signal is sent into a deflector 5 from a controller 6. When the beam is intended to be projected, the beam passed through the aperture 2H in the first aperture plate is made to be deflected properly by the deflector 5, the image is formed at the corner part of an aperture 3H in a second aperture plate 3M, and the beam passed through the aperture 3H is projected on the prescribed position on a sample by a lens 7 and a deflector 9. |
