READ ONLY MEMORY DEVICE

摘要

PURPOSE:To increase the operational speed by selecting whether the state read out in a digit line is directly outputted as the state of output data bit or after inverting it is outputted by a NOT circuit optional by means of wiring. CONSTITUTION:NOT circuits Io-Im-l are provided for respective digit lines Do, Dm-1, and whether the as the state read out in the digit lines Do, Dm-1 is directly outputted as the state of output data bit or after inverting it is outputted by the NOT circuit Io-Im-1 is made selectable by means of wiring, and whether to make the output data bit state and the state read out in the digit line Do, Dm-1 coincident with each other or to invert said state is determined. As a result, the number of memory cores FET connected to one digit line can be made equal to or less than a half of the number exceeding the number of connected word liens by one. The load capacity of a digit line accordingly can be made smaller, and the operational speed is improved.