| 摘要 |
<p>In the NOVRAM cell of the present invention, a pair of cross-coupled variable threshold floating gate MOS (VTMOS) transistors facilitates nonvolatile and non-inverting writing and reading of data in the memory cell. The disadvantages of the prior art are overcome by completely disconnecting the VTVMOS transistors from the remainder of the memory cell during normal volatile writing and reading operations. Accordingly, during normal writing and reading operations the NOVRAM cell of the present invention performs just as if the pair of cross-coupled VTVMOS transistors were not even present, so that there is no problem of leakage currents or instability due to excessive charging or discharging of the floating gates of the VTVMOS transistors.</p> |
