MANUFACTURE OF PHOTOCONDUCTIVE ELEMENT

摘要

PURPOSE:To improve the interface between a substrate and amorphous silicon, and to prevent the reduction of the speed of formation of a film through deposition at high speed at high power by shaping the film at low power at the initial stage of the formation of the film. CONSTITUTION:The inside of a reaction oven is evacuated by means of a rotary pump, and an amorphous silicon hydride film is shaped. The film is formed for ten min at 5W discharge power first and for thirty min at 30W discharge power successively. An Au electrode 4 is shaped onto amorphous silicon hydride 3 deposited onto a transparent electrode 2 molded to the glass substrate 1, and sandwich structure is formed. Spectral responsivity characteristics at the time when positive 10V voltage is applied to the transparent electrode 2 side in the photoconductive element obtained in this manner are shown in a full line. Spectral responsivity characteristics at the time when the silicon is deposited for thirty min at 30W discharge power from the beginning are shown in a dotted line. It comes out that sensitivity to blue light increases by shaping the film at low power at the initial stage of the formation of the film.