| 摘要 |
PURPOSE:To enhance sharply the dampproof property of the device by a method wherein a protectively insulating film consisting of a glass layer is formed directly on a wiring and the wiring formed face according to the bias sputtering method. CONSTITUTION:A high pure quartz (SiO2) plate 11 is fixed on the first electrode 9 of a parallel plane type sputtering device, and a semiconductor substrate 12 to be processed is fixed on the second electrode 10. Argon (Ar) gas is flowed in from a gas introducing port 6, and the inside of a reaction vessel 8 is held in the Ar atmosphere. The first electrode 9 is earthed G, a high-frequency voltage RF is applied between the first electrode 9 and the second electrode 10, and the sputtering process is performed applying a DC negative bias voltage B to the second electrode 10. Accumulation of the protective film 13 consisting of SiO2 is advanced, steep step parts 3 formed on the sides of the wiring 1 are buried gently, and no dislocation is generated in the step parts of the protectively insulating film 13. |
