发明名称 Superconducting tunnel junction device.
摘要 <p>An amplifying or switching superconductive device is described whose current-voltage characteristic is drastically altered by heavy injection of excess energetic quasi-particles. In this device, the superconducting bandgap of a superconducting layer is greatly altered by overinjection of energetic quasi-particles so that the @bandgap@ changes greatly with respect to its thermal equilibrium value, and in most cases is made to vanish. In a preferred embodiment, a three electrode (S1, S2, S3) device is fabricated where at least one of the electrodes (S2) is a superconductor. Tunnel barriers (32, 34) are located between the electrodes. A first tunnel junction (S1, 32, S2) is used to heavily inject energetic quasi-particles into the superconducting electrode (S2) to change its superconducting bandgap drastically. In turn, this greatly modifies the current-voltage characteristics of the second tunnel junction (S2, 34, S3). This device can be used to provide logic circuits, or as an amplifier, and has an output sufficiently large than it can drive other similar devices.</p>
申请公布号 EP0081007(A1) 申请公布日期 1983.06.15
申请号 EP19810110277 申请日期 1981.12.09
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FARIS, SADEG MUSTAFA
分类号 H01L39/22;(IPC1-7):01L39/22 主分类号 H01L39/22
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