| 摘要 |
PURPOSE:To obtain the transistor, hFE thereof is high and the quantity of noises generated therefrom is small, by deeply forming an emitter region and increasing effective impurity concentration. CONSTITUTION:An N<+> Si layer 2 is shaped to one part of the suface of a P type Si susbstrate 1, and an N type Si semiconductor layer 3 is grown to the whole surface in an epitaxial manner. An emitter region 61 is formed at the same time as a P<+> type region 4 in an isolation diffusion process, and a donor impurity is added and diffused from the surface of an N type island region 31 surrounded by the P type region 4 and an N<+> type region 5 is shaped. An acceptor impurity is evaporated and diffused, and acceptor concentration in the vicinity of the surface of the emitter region 61 is increased while a P type collector region 62 is formed. |
