| 摘要 |
PURPOSE:To prevent the contamination of an MOS semiconductor element by performing an impurity diffusion by ion implantation so as to pass impurity to the first resist film with the first and second resist films accumulated on the element as masks. CONSTITUTION:A P type well 102 is formed on an N type silicon substrate 101, an element is isolated via an oxidized film 103, and a gate oxidized film 104 is then formed. A resist 105 is then formed on the film 104, and a resist 106 is then coated thereon. In a P-channel region, both the region where only the resist 105 is covered on the film 104 and the region where no resist remains at all are formed. Double resists of resists 105, 106 are covered on the N-channel region. When ions are implanted to the P-channel in this state, the threshold values between the part where the resist is not covered at all and the region where only the resist 105 is covered becomes different from each other. |
