| 摘要 |
PURPOSE:To grow a single crystal having good quality free from micro deviations in faces with good efficiency at a high speed in the stage of growing a single crystal of an element or compd. having an extremely high m. p. by a Bridgman method by rotating a crucible during growing of the crystal. CONSTITUTION:One end of a suspending wire 2 is fixed to a crucible and the other end to a vertically moving rack bar 3. A rotating mechanism 6 such as a motor or the like is provided between the wire 2 and the bar 3. After a raw material is melted, crucible 1 is brought down in an electric furnace 7; at this same instant, the mechanism 6 is rotated to rotate the crucible 1, and during this time, the crystal is grown. More specifically, while the crucible 1 is rotated, the crucible is moved downward and is rotated in the furnace 7 so that the molten raw material is solidified gradually from the bottom end part of the crucible and a single crystal is grown. Thus the single crystal having good quality freed from micro deviations in faces is grown. Since the temp. applied upon the crystal is uniform, the speed of growing is increased, and the growing at a speed >=2 times higher than that in the prior art is made possible. |
