| 摘要 |
PURPOSE:To prevent the decrease in the breakdown voltage due to the high pressure resistance of source and drain junction layer and a channel stopper junction by increasing the gate length of an MOSFET and adding a pinch-off resistance to both the source and the drain adjacent to a source. CONSTITUTION:In an MOSFET, a pinch-off resistance layer 24 is formed on both a source diffused part 22 and a drain diffused part 23, thereby enhancing the pressure resistance of both the region 22 and the bonding layer of the region 23. The decrease in the breakdown voltage due to the junction of the source, drain diffused layer and the channel stopper by isolating the layers 22, 23 from the channel stopper 27. |
