| 摘要 |
PURPOSE:To make it possible to form a crystalline SiC film at a low substrate temperature, by forming a nucleus for the growth of SiC crystal on the substrate in advance to the formation of the SiC film. CONSTITUTION:An element such as Si is deposited on a substrate by an evaporation of sputtering to such a thickness as not to form a continuous film, e.g. 10- several tens of Angstrom , thereby to form a nucleus for the growth of SiC crystal. Subsequently, an SiC film is formed on the substrate by sputtering within a discharge gas containing methane as the reaction gas and using Si as the target, while maintaining the substrate within a predetermined temperature range of, for example, between 400 and 500 deg.C. According to this method, it is possible to lower the substrate temperature, so that the crystalline SiC film can be formed even on a substrate which cannot be heated to high temperature, such as glazed ceramic substrate. |
