| 摘要 |
PURPOSE:To prevent mobile ion contamination by forming a molybdenum thin film continued to the formation of a gate oxidized film, performing a heat treatment, forming and patterning a silicon oxidized film thereon, and patterning the thin film with the silicon oxidized film as a mask. CONSTITUTION:When a semiconductor using as a gate electrode a molybdenum thin film is manufactured, a thin molybdenum film is formed continued to the formation of a gate oxidized film, it is then heat treated in the temperature range of 700 to 1,100 deg.C. Then, a silicon oxidized film is formed on the thin molybdenum film, and the silicon oxidized film is patterned. With the film as a mask the thin molybdenum film is patterned. The silicon oxidized film on the thin molybdenum is allowed to remain, the molybdenum film is heat treated in advance at high temperature before the formation of the film, thereby preventing the deterioration of the electric characteristics of the element caused by the remaining silicon oxidized film. |
