| 摘要 |
PURPOSE:To produce titled single crystals with good crystallinity and mass productivity and with feasibility of an increase in diameter economically by covering the melt of a high dissociation pressure compd. with the melt of boron oxide, and rotating and pulling the same in an atmosphere of volatile component constituting the high dissociation pressure compd. CONSTITUTION:A rotating and pulling shaft 6 is brought down to bring a seed crystal 12 into contact with the melt 8 of a high dissociation pressure compd, then while the shaft is rotated, the shaft is pulled up to grow a single crystal 15. The single substance 19 of the volatile components in a receiving tray 18 is heated and evaporated by an after heater 3, by which an atmosphere of the volatile components is created in a furnace core pipe 17. Therefore, the degradation of the crystallinity near the surface by the dissociation of the volatile component from the surface of the single crystal grown 15 is obviated. Since the melt 8 is coated with the melt 16 of boron oxide, the evaporation from the melt 8 is suppressed, sticking on the inside surface of the pipe 17 is decreased and observation is made easy. Even if deposits drop, the deposits fall onto the covering melt 16; therefore, the growth of the single crystal is not interfered and the rate of single crystallization is improved. |
