SEMICONDUCTOR DEVICE

摘要

PURPOSE:To expand a safely operating region and to improve the reliability of a semiconductor device by forming a mixed film of a polycrystalline semiconductor and an oxidized film on the surface of a substrate formed with a transistor and forming a resistance layer on the prescribed part of the film. CONSTITUTION:An N type base region 2 is formed on a P type silicon crystalline substrate 1, and a P type emitter region 3 by boron diffusion is formed in the region 2. A mixed film 11 mixed with oxidized silicon in polycrystalline silicon is formed on the surface of the substrate. A resistance layer 12 and a high impurity density region 6 covered ohmically with an electrode are simultaneously formed on the base electrode region of the film 11. Further, a base electrode 4 and an emitter electrode 5 are formed.