| 摘要 |
PURPOSE:To prevent the generation of segregation, and to obtain the semiconductor device consisting of an excellent low-noise element by forming an amorphous treatment process and an impurity region shaping process. CONSTITUTION:An oxide film 2 is shaped to the surface of an N type semiconductor substrate 1 through thermal oxidation, electron rays are irradiated while using the film 2 as a mask, and a base forming prearranged region is changed into amorphous. Boron as an impurity is diffused into the base forming prearranged region turned into amorphous, and a base region 4 is shaped. The oxide film 2 is removed, an oxide film 5 is newly formed to the surfaces of the semiconductor substrate 1 and the base region 4, and a window 6 is shaped into a region corresponding to an emitter forming prearranged region in the base region 4 through a photoetching method. The emitter forming prearranged region is changed into amorphous while using the oxide film 5 as a mask, phosphorus as an impurity is diffused, and an emitter region 7 is molded. Extracting electrodes 9, 10 each connected to the base region 4 and the emitter region 7 are shaped, and the semiconductor device 11 is obtained. |
