| 摘要 |
PURPOSE:To increase working speed, and to form three or more of gate electrodes easily by growing a source region, an active region and a drain region onto an amorphous, polycrystal or single crystal insulating substrate in polycrystal shape in stratiform form parallel with the substrate and making carriers travel in the direction vertical to the substrate. CONSTITUTION:The drain region 12 is grown onto the insulating substrate 9 in polycrystal shape. The drain region 12 is grown in polycrystal shape in such a manner that the temperature of the substrate is kept at a substrate softening temperature or lower and silicon is vacuum-deposited by means of an electron gun while evaporating an N type impurity (such as phosphorus, antimony, arsenic, etc.) by means of a crucible. Silicon is grown in polycrystal shape by vacuum-depositing only silicon as the active region 13. The source region 14 in which an K type impurity added layer is grown in the same manner as the drain region 12 is formed again. The unnecessary sections of semiconductor layers 12, 13, 14 are removed through etching, and a drain electrode 11, a source electrode 15 and a gate electrode 17 are shaped. |
