| 摘要 |
PURPOSE:To prevent a short-channel effect and a punch-through phenomenon, to keep the low resistance of source-drain regions and to improve the degree of integration and attain operation at high speed by shallowing the depth of the source-drain regions in the vicinity of a gate electrode and deepening it in a region separated from the gate electrode. CONSTITUTION:An element isolation region 12 is formed onto a p type silicon substrate 11, and a molybdenum silicide film is deposited onto the whole surface. The gate electrode 14 is shaped through patterning. The source-drain regions 18, 19 are formed through heat treatment in an oxidizing atmosphere. A CVD-SiO2 film 20 is deposited onto the whole surface, contact holes 21, 21 are bored, an Al film is evaporated onto the whole surface, and Al wiring 22, 22 are shaped through patterning. With the n channel MOS type transistor obtained, the depth of the source-drain regions 18, 19 is shallow in the vicinity of the gate electrode 14 and deep in the region separated from the gate electrode 14. |
