| 摘要 |
PURPOSE:To control the compsn. distributions in the thickness direction of films formed by reaction easily in a device for allowing the vapor flow from an evaporating source to react with the gas introduced from the outside by combining a nozzle for viscous flow of the gas and a nozzle for molecular flow of the gas. CONSTITUTION:For example, gaseous O2 is injected toward a polyimide substrate 7 wound in a direction 21 from a nozzle 14 which emits viscous flow in a device for vacuum vapor deposition, to allow the same to react with the vapor flow of iron 15 which is an object to be melted in an evaporating source 4 going toward the substrate 7. A thin magnetic film of iron oxide is thus formed on the substrate 7. Here, if a nozzle 18 which emits molecular flow is disposed and gaseous O2 is injected therefrom, the direction of the gas is unified in one direction; therefore, the gas reacts with the iron of the evaporating molecules that come flying only in a certain specific place. Thus, the above-described purpose is achieved. In the nozzle 18, the gas is injected and adiabatically expanded by a nozzle 8 in a chamber 13 which is evacuated to a high vacuum with a pump 13. The impulse waves generated by said expansion are removed with a skimmer 9, and the componenets having the velocity vector except in the specific direction are evacuated with a pump 12, whereby the molecular flow unified in one direction is obtained. |
