| 摘要 |
PURPOSE:To obtain a large output for the titled device by a method wherein, when a p type and an n type electrodes which are provided on one face of a semiconductor laser diode are installed on a heat radiating material, a thermal stress lessening material consisting of an Si substrate, having a diffusion region on the surface facing the above electrodes is interposed between the electrodes, and the temperature rise of the diode active region is reduced. CONSTITUTION:On a semiconductor GaAs substrate 1, an n type GaAlAs layer 2, an n type GaAs active layer 3, an n type GaAlAs layer 4 and an n type GaAs surface layer 5 are laminated and epitaxially grown, and a mesa region 6 is formed by performing an etching on the layers 4 and 5 corresponding to the active region 13 located in the center of the active layer 3. Then, on one of the parts pinching the region 6, a p type region 7, entering into the substrate 1, is formed by diffusion, and a p type and an n type electrodes 8 and 9 are coated on the layer 5, which is divided by the region 6, respectively. Subsequently, when these electrodes are installed on a non-illustrated heat- radiating plate, said installation is performed through the intermediary of a thermal stress lessening material 10 consisting of an Si substrate 14, whereon a Ti metal layer 17 and an Au metal layer are coated on the surface, having a p<+> type diffusion layers 19 and 19'. |
