| 摘要 |
PURPOSE:To obtain the PIN diode having extremely small forward series resistance by a method wherein a canal is provided on the surface of an N type semiconductor substrate, a P<+> type layer is provided therein, an N<+> type layer is adhered on the back, protective films coming in contact with the P<+> type layer are provided on the surface, and an electrode is adhered burying the canal on the P<+> type layer. CONSTITUTION:The canal 6a is formed on one main surface of the N type semiconductor substrate 6 having resistivity of 2,000OMEGA.cm or more. The P<+> type layer 7 is formed in the canal as to form a canal. Then the N<+> type layer 8 is formed on the back of the N type substrate 6, and the electrode 9 is adhered by plating, etc., as to bury the canal 7a in succession. The films 4 are the protective films. At the PIN diode constituted by this way, thickness of the semiconductor substrate can be formed thick even when thickness of the intrinsic layer is formed thin. Accordingly the PIN diodes having extremely small forward series resistance can be manufactured easily in the scale of mass production. |
