发明名称 HIGH TENSILE AU ALLOY SMALL-GAGE WIRE FOR CONNECTING SEMICONDUCTOR ELEMENTS
摘要 PURPOSE:To obtain small-gage wire made of high tensile alloy, by a method wherein said alloy includes 0.0003 to 0.01wt% one or more kinds of rare earth elements such as La, Ce, Pr, ..., and Au and inevitable impurities as the rest components. CONSTITUTION:Alloy containing one or more kinds of elements from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Py, Ho, Er, Tm, Yb, Lu, Sc and Y of 0.0003-0.01wt%, and Au and inevitable impurities as the rest components has the advantage that it is not broken even when it is draw-processed to a small-gage wire having 0.05mm.phi less diameter. Accordingly, the wire made of this alloy is suitable for high speed connection of semiconductor elements, as it is not disconnected. Alloy should contain rare earth elements from 0.0003 to 0.01wt%, when less than 0.0003wt%, required high tensile strength is not achieved, and when more than 0.01wt%, brittleness is increased.
申请公布号 JPS5896741(A) 申请公布日期 1983.06.08
申请号 JP19810195299 申请日期 1981.12.04
申请人 MITSUBISHI KINZOKU KK 发明人 HOSODA NAOYUKI;TANAKA MASAYUKI;MORI TAMOTSU
分类号 C22C5/02;H01L21/60 主分类号 C22C5/02
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