| 摘要 |
<p>PURPOSE:To obtain the cell having the large ratio of optical transmissibility and transmissibility in darkness of 10<3>-10<2> by a method wherein, amorphous silicon is used as a photoconductive material when forming a photoconductive cell which changes its resistance characteristics by the irradiation of ultraviolet rays, visible rays of light, infrared rays, X-rays, gamma-rays and the like. CONSTITUTION:An amorphous silicon layer is formed on a glass substrate, having a transparent electrode, or a metal substrate consisting of Al, Cu, Ni, stainless steel and the like using a plasmatic CUD method. At this time, a change is made on H2 containing B2H6 of 100ppm and H2 containing 10% of SiH4 to the degree of 10<-1>-10<-5> in the ratio of flow rate, the substrate temperature is held at 280 deg.C, the RF power to be applied is maintained at 20W or thereabout, and a P type amorphous silicon layer is deposited. Or, an N type amorphous silicon layer may be formed using PH3 instead of B2H6. Thus, the photoconductive cell suitable for an optical switch, a day-and-night light and the like can be obtained.</p> |
