| 摘要 |
PURPOSE:To improve the contrast of the light-emitting part of the titled element by a method wherein a transparent film, which is thinner than an electrode in thickness, coated on a P-N junction and on the whole surface or on the part excluding the light-emitting part consisting of the P-N junction of the semiconductor substrate, whereon an electrode for application of a current is formed, thereby enabling to reduce scattering beams of light. CONSTITUTION:A P-N junction 3 is formed on the surface layer part of a semiconductor substrate 1, and one of annular electrode 2 is provided in such a manner that it comes in contact with the circumference of the P-N junction 3. Then a transparent film 5, which is thinner than the electrode 2 in thickness, is coated on the whole surface including electrode 2 and the junction 3, and other electrode 4 is installed on the entire back side of the substrate 1. According to this constitution, when the wavelength of an emitted light is considered to be lambda and the reflective index of the transparent film 5 is n, the thickness l of the film 5 is prescribed as l=(lambda/2n)(p+1/2). At this point, p is set at 0, 1, 2 and the like. Also, the film 5 may not be existed on the P-N junction 3, but anyhow the reflected beams of light are reduced, thereby enabling the light-emitting part to have a high contrast. |
