| 摘要 |
<p>PURPOSE:To repair the breaking part of wire by a method wherein a different kind metal is laminated on a first layer wiring of poly-Si, Al, etc., the connection correcting part is masked with a resist, the different kind metal is etched to be removed, and the mask is removed. CONSTITUTION:An Mo film 5 is formed covering the breaking part 5 of the Al wiring 3 on an insulating film 2 on an Si substrate 1, and the region necessitating correction is exposed using a negative type photoresist to form the resist mask 6. For exposure of a minute part, an electron beam exposure or an ion beam exposure is effective. The Mo film 5 is etched to be removed using the mask 6 to form the Mo wiring 7 connecting the breaking part, and the resist mask 6 is removed. By this constitution, breaking of a metal wiring being impossible to correct hitherto can be repaired. It is necessary to attain electric conduction between both the metals treating the device with heat after formation of the second metal layer or formation of the second wiring according to the way of selection of the first and the second wiring metals.</p> |
