| 摘要 |
PURPOSE:To make it possible to obtain a semiconductor chip having a uniform characteristics with an excellent yield, by setting a space of 50mum or more from the specular surface of a high-density silicon substrate to the back sice thereof, and by forming a film having a small diffusion constant on the back side of the silicon substrate. CONSTITUTION:On a silicon substrate 11 formed by doping impurities of high density therein, an SiO2 film 15 is formed on the outer surface thereof containing the side of the back surface 17 whereon an epitaxial layer is not formed. Mirror grinding is applied on the front surface side of the silicon substrate 11 to form a specular surface 12 whereon the epitaxial layer is to be formed. The SiO2 film 15 is formed with a space part 18 set to be at least 50mum or more apart from the specular surface 12. The epitaxial layer 13 is grown in a vapor phase on the specular surface 12 of the silicon substrate 11 having the specular surface 12, the SiO2 film 15, and the space part 18 which is provided between them and whereon the SiO2 film 15 is not formed. |
