发明名称 PREPARATION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make a semiconductor layer usable for a solar cell and an electrophotographic sensitive substance, by evaporating silicon from a silicon evaporation source in the presence of active hydrogen and hydrogen ions obtained from discharge so as to be connected on a substrate, and thereby forming the semiconductor layer made of amorphous silicon with hydrogen atoms introduced therein on the surface of the substrate. CONSTITUTION:In a bell jar 1, silicon vapor obtained by the evaporation from a silicon evaporation source 8 flies through a space wherein active hydrogen and hydrogen ions introduced from a hydrogen gas discharge tube 7 exist and is connected onto a substrate 4. While the silicon vapor flies or when it is connected, the active hydrogen is introduced therein, and as the result, a semiconductor layer which is formed of a-silicon and whose dangling bond is sealed off by hydrogen atoms is formed on the surface of the substrate 4. Such formation of the semiconductor layer by the evaporation of silicon in the presence of the active hydrogen and hydrogen ions enables the separate control of the degree of heating of the silicon evaporation source 8, the degree of the activity of the active hydrogen, and the quantity of hydrogen ions and/or the quantity of the hydrogen ions introduced into the bell jar 1.
申请公布号 JPS5895817(A) 申请公布日期 1983.06.07
申请号 JP19810192733 申请日期 1981.12.02
申请人 KONISHIROKU SHASHIN KOGYO KK 发明人 SHINDOU MASANARI;OOTA TATSUO;SATOU SHIGERU;SHIMA TETSUO;MIYOUKAN ISAO
分类号 H01L31/0248;H01L21/203 主分类号 H01L31/0248
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