| 摘要 |
PURPOSE:To form metallic wiring with a flat surface by attaching a metallic thin-film from the upper section of a groove shaped to an insulating film on a semiconductor substrate and dry-etching the thin-film while selecting the conditions of etching. CONSTITUTION:The second insulator 24 is formed onto the first insulator 22 on the semiconductor substrate 21, and an uneven surface by the insulator is shaped through the partial etching only of the second insulator 24. The metallic thin- film 23 is attached onto the whole surace. A photo-resist 25 is thickly applied onto the whole surface of the metallic thin-film 23 to flatten the surface. The photo-resist 25 and the metallic thin-film 23 on the convex sections (the insulator 24) of the insulating film are all etched through a dry etching method under a condition that the speed of etching of the photo-resist 25 and the metallic thin- film 23 is equalized, and only the insulators 24 are exposed to the surface. |
